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Journal Articles

Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

Sugai, Hiroyuki; Matsunami, Noriaki*; Fukuoka, Osamu*; Sataka, Masao; Kato, Teruo; Okayasu, Satoru; Shimura, Tetsuo*; Tazawa, Masato*

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.291 - 294, 2006/09

 Times Cited Count:15 Percentile:70.56(Instruments & Instrumentation)

We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Structural changes in anatase TiO$$_{2}$$ thin films irradiated with high-energy heavy ions

Ishikawa, Norito; Yamamoto, Shunya; Chimi, Yasuhiro

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.250 - 253, 2006/09

 Times Cited Count:42 Percentile:92.74(Instruments & Instrumentation)

Electronic excitation effects on TiO$$_{2}$$ thin films with anatase structure irradiated with 230MeV Xe ions have been studied by means of X-ray diffraction method. X-ray diffraction intensity shows exponential decrease as a function of ion-fluence, indicating that tracks having about 10nm diameter are introduced by the irradiation. Rutile structured TiO$$_{2}$$ was also irradiated and exhibited different damage behavior from that of anatase one. We demonstrated that X-ray diffraction meathod is one of the powerful tool to investigate track structure.

Journal Articles

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09

 Times Cited Count:24 Percentile:83(Instruments & Instrumentation)

We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Swift heavy ion irradiation effects in nanocrystalline gold

Chimi, Yasuhiro; Iwase, Akihiro*; Ishikawa, Norito; Kobiyama, Mamoru*; Inami, Takashi*; Kambara, Tadashi*; Okuda, Shigeo*

Nuclear Instruments and Methods in Physics Research B, 245(1), p.171 - 175, 2006/04

 Times Cited Count:16 Percentile:72.85(Instruments & Instrumentation)

We have studied effects of irradiation with energetic particles on defect accumulation in nanocrystalline gold (nano-Au). The specimens of nano-Au foil (3-5 $$mu$$m thickness) with various grain sizes (23-156 nm) are prepared by the gas deposition method and subsequent thermal annealings. Irradiations of the specimens with 60-MeV $$^{12}$$C ions, 3.54-GeV $$^{136}$$Xe ions or 2.0-MeV electrons are performed at low temperature. The defect accumulation behavior is observed by measuring the electrical resistivity change during irradiation. Through an analysis of defect accumulation behavior, cross-sections for defect production, $$sigma$$$$_{d}$$, and annihilation, $$sigma$$$$_{r}$$, in nano-Au increase monotonically as the grain size decreases. These results are considered to be caused by the existence of a large volume fraction of the regions near grain boundaries in nano-Au where the threshold energy for atomic displacements, E$$_{d}$$, becomes lower than in polycrystalline gold. The possibility of electronic excitation effects in nano-Au is also discussed.

Journal Articles

Effects of swift heavy ion irradiation on magnetic properties of Fe-Rh alloy

Fukuzumi, Masafumi*; Chimi, Yasuhiro; Ishikawa, Norito; Suzuki, Motohiro*; Takagaki, Masafumi*; Mizuki, Junichiro; Ono, Fumihisa*; Neumann, R.*; Iwase, Akihiro*

Nuclear Instruments and Methods in Physics Research B, 245(1), p.161 - 165, 2006/04

 Times Cited Count:17 Percentile:74.61(Instruments & Instrumentation)

We have performed swift heavy ion irradiations in Fe-50at.%Rh alloys at room temperature. Before and after the irradiations, the magnetic properties and the lattice structure are measured using Superconducting QUantum Interference Device (SQUID) and X-Ray Diffractometer (XRD), respectively. We have also performed X-ray Magnetic Circular Dichroism (XMCD) measurement near the Fe K-edge at the synchrotron radiation facility, SPring-8, to examine the irradiation-induced ferromagnetic state near the specimen surface. We have found that the swift heavy ion irradiations induce the ferromagnetic state in Fe-50at.%Rh alloy below the antiferromagnetism-ferromagnetism transition temperature of the unirradiated alloy and the lattice expasion by 0.3%. For the specimens irradiated with swift heavy ions, we observe the XMCD spectra correponding to ferromagnetisim, which depend on the mass of irradiating ions and/or irradiation fluence. Effects of energy loss through electronic excitation and elastic collisions on lattice and magnetic structures of Fe-Rh alloy are discussed.

Journal Articles

Microstructure and atomic disordering of magnesium aluminate spinel irradiated with swift heavy ions

Yamamoto, Tomokazu*; Shimada, Mikio*; Yasuda, Kazuhiro*; Matsumura, Sho*; Chimi, Yasuhiro; Ishikawa, Norito

Nuclear Instruments and Methods in Physics Research B, 245(1), p.235 - 238, 2006/04

 Times Cited Count:13 Percentile:65.83(Instruments & Instrumentation)

We have investigated the microstructure change and atomic disordering process in magnesium aluminate spinel, MgO ${it n}$Al$$_{2}$$O$$_{3}$$ with ${it n}$=1.1 and 2.4, irradiated with swift heavy ions of 200-MeV Xe$$^{14+}$$ and 350-MeV Au$$^{28+}$$. Transmission electron microscopy techniques of bright-field (BF) and high-resolution (HR) imaging, as well as high angular resolution electron channeling X-ray spectroscopy (HARECXS) are employed in quantitative analysis of irradiation-induced structural change. Ion tracks show columnar dark contrast of 4-7 nm in diameter at the incident surface in BF images. Strong strain contrast often arises among plural ion tracks formed closely. Clear lattice fringes are observed in HR images even inside the ion tracks. It indicates that the spinel crystals are not amorphized but partially disordered along the ion tracks. Quantitative HARECXS analysis shows that cation disordering progresses with ion fluence. It is revealed that the disordered regions are extended over 12$$pm$$2 nm in diameter along the ion tracks.

Journal Articles

Effects of high-energy ion irradiation in bismuth thin films at low temperature

Chimi, Yasuhiro; Ishikawa, Norito; Iwase, Akihiro*

Materials Research Society Symposium Proceedings, Vol.792, p.379 - 384, 2004/00

We have studied high-energy ion irradiation effects in bismuth by measuring the electrical resistivity at low temperature in relation to its structural change. Bismuth thin films (300-600 $AA  thick) are irradiated below $sim$$10 K with several kinds of energetic (100-200 MeV) heavy ions. The resistivity of the specimen is measured in-situ at $$sim$$7 K during irradiation. After irradiation, annealing behavior of the resistivity is observed up to $$sim$$35 K. The temperature dependence of the resistivity during annealing shows an abrupt increase around 20 K, implying re-crystallization of irradiation-induced amorphous region. Since amorphous bismuth also shows a superconducting transition below $$sim$$6 K, high-density electronic excitation due to energetic heavy-ion irradiation may induce columnar region of superconducting amorphous bismuth in normal crystalline bismuth. We are trying to detect the superconducting transition as a result of irradiation-induced amorphization.

Journal Articles

Depth-dependent and surface damages in MgAl$$_{2}$$O$$_{4}$$ and MgO irradiated with energetic iodine ions

Aruga, Takeo; Katano, Yoshio*; Omichi, Toshihiko*; Okayasu, Satoru; Kazumata, Yukio*; Jitsukawa, Shiro

Nuclear Instruments and Methods in Physics Research B, 197(1-2), p.94 - 100, 2002/11

 Times Cited Count:9 Percentile:51.46(Instruments & Instrumentation)

no abstracts in English

Journal Articles

The Interpretation of surface damages in Al$$_{2}$$O$$_{3}$$, MgAl$$_{2}$$O$$_{4}$$ and MgO irradiated with energetic iodine ions

Aruga, Takeo; Katano, Yoshio*; Omichi, Toshihiko*; Jitsukawa, Shiro

Surface & Coatings Technology, 158-159, p.444 - 448, 2002/09

no abstracts in English

Journal Articles

Defect production induced by electronic excitation in iron

Chimi, Yasuhiro; Iwase, Akihiro; Ishikawa, Norito; Kambara, Tadashi*

Nuclear Instruments and Methods in Physics Research B, 193(1-4), p.248 - 252, 2002/06

 Times Cited Count:2 Percentile:18.93(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Lattice parameter change due to electronic excitation in insulating EuBa$$_{2}$$Cu$$_{3}$$O$$_{y}$$

Ishikawa, Norito; Iwase, Akihiro; Chimi, Yasuhiro; Michikami, Osamu*; Wakana, Hironori*; Hashimoto, Takeo*

Nuclear Instruments and Methods in Physics Research B, 191(1-4), p.606 - 609, 2002/05

 Times Cited Count:1 Percentile:12.5(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Electronic sputtering of oxides by high energy heavy ion impact

Matsunami, Noriaki*; Sataka, Masao; Iwase, Akihiro

Nuclear Instruments and Methods in Physics Research B, 193(1-4), p.830 - 834, 2002/01

 Times Cited Count:27 Percentile:83.24(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Electronic excitation effects on secondary ion emission from a foil of conducting material bombarded by high energy heavy ions

Sekioka, T.*; Terasawa, Michitaka*; Sataka, Masao; Kitazawa, Shinichi; Niibe, M.*

Nuclear Instruments and Methods in Physics Research B, 193(1-4), p.751 - 754, 2002/01

 Times Cited Count:2 Percentile:18.93(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Defect structure of high-T$$_{c}$$ superconductor by high-energy heavy ion irradiation

Sasase, Masato; Okayasu, Satoru; Kurata, Hiroki; Hojo, Kiichi

Journal of Electron Microscopy, 51(Supple), p.S235 - S238, 2002/00

no abstracts in English

Journal Articles

Electron spectrra from singlet and triplet states of Ne$$^{6+**}$$ produced by low energy Ne$$^{8+}$$+He, Ne and Ar collisions

Kitazawa, Shinichi; Ida, H.*; Matsui, Y.*; Takayanagi, Toshinobu*; Wakiya, K.*; Iemura, K.*; Otani, Shunsuke*; Suzuki, H.*; Kanai, Yasuyuki*; Safronova, U. I.*

Journal of Physics B; Atomic, Molecular and Optical Physics, 34(16), p.3205 - 3220, 2001/08

 Times Cited Count:5 Percentile:31.39(Optics)

no abstracts in English

Journal Articles

Element- and orientation-selective photo-decomposition using linearly polarized synchrotron radiation

Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Baba, Yuji; Sekiguchi, Hiromi*

KEK Proceedings 2001-13, p.24 - 25, 2001/06

no abstracts in English

Journal Articles

Fragmentation and charge-neutralization pathways depending on molecular orientation at surfaces

Sekiguchi, Tetsuhiro; Sekiguchi, Hiromi*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Shimada, Hiromichi*; Baba, Yuji

Surface Science, 482-485(Part.1), p.279 - 284, 2001/06

no abstracts in English

Journal Articles

Sputtering of high ${it Tc}$ superconductor YBa$$_{2}$$Cu$$_{3}$$O$$_{7-delta}$$ by high energy heavy ions

Matsunami, Noriaki*; Sataka, Masao; Iwase, Akihiro

Nuclear Instruments and Methods in Physics Research B, 175-177, p.56 - 61, 2001/04

 Times Cited Count:8 Percentile:52.36(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Defect production induced by primary ionization in ion-irradiated oxide superconductors

Ishikawa, Norito; Iwase, Akihiro; Chimi, Yasuhiro; Michikami, Osamu*; Wakana, Hironori*; Kambara, Tadashi*

Journal of the Physical Society of Japan, 69(11), p.3563 - 3575, 2000/11

 Times Cited Count:9 Percentile:52.88(Physics, Multidisciplinary)

no abstracts in English

Journal Articles

Selective fragmentation of surface molecules excited by linearly polarized SR

Sekiguchi, Tetsuhiro; Sekiguchi, Hiromi*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Shimada, Hiromichi*; Baba, Yuji

Photon Factory Activity Report 1999, Part B, P. 325, 2000/11

no abstracts in English

48 (Records 1-20 displayed on this page)